Paper
17 May 2022 Excess noise measurements in Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes
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Abstract
Avalanche photodiodes (APDs) are used in high-speed data communication and light detection and ranging (LIDAR) systems due to their high sensitivity and high speed. However, InAlAs and InP based APDs have relatively high excess noise because they have relatively similar electron and hole ionization coefficients (α and β respectively). Here, we report on an ultra-low excess noise material Al0.85Ga0.15As0.56Sb0.44 (hereafter AlGaAsSb) with a k value (β/α) of 0.01. The excess noise and multiplication measurements were performed on both random alloy (RA) p+-i-n+ and digital alloy (DA) grown p+-i-n+ diodes with depletion regions of 1020nm and 890nm respectively. The excess noise was found to be broadly similar in both RA and DA grown structures.
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Xiao Jin, Bingtian Guo, Harry Lewis, SeungHyun Lee, Baolai Liang, Sanjay Krishna, Joe Campbell, and John David "Excess noise measurements in Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes", Proc. SPIE 12139, Optical Sensing and Detection VII, 1213907 (17 May 2022); https://doi.org/10.1117/12.2624285
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KEYWORDS
Avalanche photodetectors

Signal to noise ratio

Ionization

Antimony

Indium gallium arsenide

Avalanche photodiodes

Absorption

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