Challenge to achieve thermal atomic layer etching of non-volatile materials via stable organometallic complex formation

Yoshihide Yamaguchi; Sumiko Fujisaki; Kazunori Shinoda; Hiroyuki Kobayashi; Kiyohiko Sato; Kohei Kawamura; Kenji Maeda; Masaru Izawa

doi:10.1117/12.2614198

25 May 2022 Challenge to achieve thermal atomic layer etching of non-volatile materials via stable organometallic complex formation

Yoshihide Yamaguchi, Sumiko Fujisaki, Kazunori Shinoda, Hiroyuki Kobayashi, Kiyohiko Sato, Kohei Kawamura, Kenji Maeda, Masaru Izawa

Author Affiliations +

Proceedings Volume 12056, Advanced Etch Technology and Process Integration for Nanopatterning XI; 1205602 (2022) https://doi.org/10.1117/12.2614198
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Abstract

Selective etching of several hard-to-etch materials is achieved by cyclic repetition of conversion into volatile organometallics followed by volatilization. A feature of this etching technology is the processes of adding volatility to these materials by converting the surface of the materials into intermediatory generated organometallics with thermal stability; one key point is stabilizing materials for the organometallics, and the other is a reaction pathway via inherently stable organometallics. In layers of Co metal, one hard-to-etch material, a specific oxidation state of Co in the Co oxidizing first step avoids the reaction pathways that generate a mixture of multiple organo-cobalt complexes in the following step. For La2O3, another hard-to-etch material, an organo-lanthanum complex generated in the ligand adsorbing first step is immediately stabilized by a stabilizer. The surface-modified layer composed of the resultant stabilized organo-lanthanum complex prevents the ligand species from diffusing deeply and from increasing the modified layer thickness. The following step, in both cases, is rapid thermal annealing by infrared (IR) irradiation to remove the surface modified layer without decomposition. The etched amount increases as the number of cycle repetitions increases with high selectivity.

Conference Presentation

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Yoshihide Yamaguchi, Sumiko Fujisaki, Kazunori Shinoda, Hiroyuki Kobayashi, Kiyohiko Sato, Kohei Kawamura, Kenji Maeda, and Masaru Izawa "Challenge to achieve thermal atomic layer etching of non-volatile materials via stable organometallic complex formation", Proc. SPIE 12056, Advanced Etch Technology and Process Integration for Nanopatterning XI, 1205602 (25 May 2022); https://doi.org/10.1117/12.2614198

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