Paper
31 August 2021 Improve the performance of 2μm GaSb-based high-power lasers by reducing the thermal effect of series resistance
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Proceedings Volume 11907, Sixteenth National Conference on Laser Technology and Optoelectronics; 119072V (2021) https://doi.org/10.1117/12.2603171
Event: Sixteenth National Conference on Laser Technology and Optoelectronics, 2021, Shanghai, China
Abstract
The resistivity of each layer constituting a 2μm GaSb-based laser is measured with Van der Pauw method. The operation temperature of GaTe doping source is optimized for lower resistivity. The series resistance contribution of each layer is calculated. A new laser structure is designed, 65% of the optical field distributes in quantum wells and waveguide layers while the series resistance is reduced to 0.28Ω.The laser with new design is fabricated, 0.89W continuous output power at room temperature can be achieved at a current of 3A with voltage of 1.40V. The slope efficiency of the emitter is 0.32W/A, and almost no slope efficiency is observed in the process of increasing current until 2.6A.
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yihang Chen, Yi Zhang, Cheng‘ao Yang, Jinming Shang, Tianfang Wang, Haiteng Wang, Yingqiang Xu, Yu Zhang, and Zhichuan Niu "Improve the performance of 2μm GaSb-based high-power lasers by reducing the thermal effect of series resistance", Proc. SPIE 11907, Sixteenth National Conference on Laser Technology and Optoelectronics, 119072V (31 August 2021); https://doi.org/10.1117/12.2603171
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