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One of the major bottlenecks in the commercialization of micro-light-emitting diodes (micro-LEDs) displays is the “massive transfer”. Monolithic integration of the driving element and the micro-LED pixel can radically avoid the technical problem of massive transfer. In this paper, the integrated device was fabricated on a gallium nitride (GaN) substrate. The device uses graphene as the channel material for the driving field-effect transistors (FETs) to control the micro-LEDs. However, in the traditional process, the residue of the ultraviolet photoresist on the surface of the graphene will cause severe doping, which resulting in the inferior performance of the fabricated graphene FETs (GFETs) device. To get higherperformance integrated devices, a new process method was intended in this paper. The performance of the GFETs was enhanced by optimizing the fabrication process, and the current control range of the GFETs for micro-LED was up to 11mA. The new process method adopts the PMMA thin film underlayer photolithography method, which effectively avoids the severe doping problem caused by ultraviolet photoresist residues on the graphene surface when fabricating GFETs for integrated devices. Based on the new fabricating technology, the transconductance and carrier mobility of GFETs had significantly enhanced. In conclusion, this research further expands the application of two-dimensional materials in the field of optoelectronic displays. Furthermore, the application of the new fabrication process of the integrated devices can be used as a technology accumulation to promote the commercialization of micro-LEDs.
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