Presentation
28 September 2021 High-NA EUV imaging: from system introduction towards low-k1 extension
Author Affiliations +
Abstract
To enable cost-effective shrink of future devices, a new High-NA EUV platform is being developed. The High-NA EUV scanner employs a novel POB design concept with 0.55NA that enables 8nm HP resolution and a high throughput. In this paper we will discuss the imaging performance and technology solutions to support our customers device roadmap from High-NA insertion towards low-k1 extension for critical Logic/MPU and DRAM layers. We will address various technology solutions that enable a high contrast through focus for decreasing feature size, such as mask stack optimization, computational litho solutions and advanced illumination shapes.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eelco van Setten, Jan Van Schoot, Anton van Oosten, Claire van Lare, Friso Wittebrood, Gijsbert Rispens, Gerardo Bottiglieri, John McNamara, Natalia Davydova, Jo Finders, Joerg Zimmermann, Bartosz Bilski, and Paul Graeupner "High-NA EUV imaging: from system introduction towards low-k1 extension", Proc. SPIE 11854, International Conference on Extreme Ultraviolet Lithography 2021, 118540G (28 September 2021); https://doi.org/10.1117/12.2600965
Advertisement
Advertisement
KEYWORDS
Imaging systems

Extreme ultraviolet

Fiber optic illuminators

Extreme ultraviolet lithography

Metals

Mirrors

Optimization (mathematics)

RELATED CONTENT

EUV source-mask optimization for 7nm node and beyond
Proceedings of SPIE (April 17 2014)
High NA EUV lithography The next step in EUV...
Proceedings of SPIE (January 01 1900)
High-NA EUV lithography: pushing the limits
Proceedings of SPIE (August 29 2019)
Actinic review of EUV masks
Proceedings of SPIE (March 20 2010)

Back to Top