Improvement of lithography performance of hemicellulose non-CAR type resist by adjusting resist structure for EUV lithography

Kazuyo Morita; Yasuaki Tanaka

doi:10.1117/12.2600916

27 September 2021 Improvement of lithography performance of hemicellulose non-CAR type resist by adjusting resist structure for EUV lithography

Kazuyo Morita, Yasuaki Tanaka

Author Affiliations +

Proceedings Volume 11854, International Conference on Extreme Ultraviolet Lithography 2021; 1185408 (2021) https://doi.org/10.1117/12.2600916
Event: SPIE Photomask Technology + EUV Lithography, 2021, Online Only

Abstract

For EUV lithography, hemicellulose EUV resist was proposed and studied the relationship between lithography performance and resist structure. The key parameters of hemicellulose resist for improvement of EUV lithography performance are hemicellulose content and resist structure (EUV sensitivity unit and sensitivity enhanced unit). OPAL-R4 which has 3 times the hemicellulose content and special resist structure compared with OPAL-R1 is the best performance. For high-NA EUV lithography, hemicellulose EUV resist has a potential of high performance.

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Kazuyo Morita and Yasuaki Tanaka "Improvement of lithography performance of hemicellulose non-CAR type resist by adjusting resist structure for EUV lithography", Proc. SPIE 11854, International Conference on Extreme Ultraviolet Lithography 2021, 1185408 (27 September 2021); https://doi.org/10.1117/12.2600916

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