Material removal mechanism of single crystal silicon by bonnet polishing

Bo Zhong; Nan Zheng; Jie Li; Xian-hua Chen

doi:10.1117/12.2594614

7 September 2021 Material removal mechanism of single crystal silicon by bonnet polishing

Bo Zhong, Nan Zheng, Jie Li, Xian-hua Chen

Proceedings Volume 11815, Novel Optical Systems, Methods, and Applications XXIV; 118150C (2021) https://doi.org/10.1117/12.2594614
Event: SPIE Optical Engineering + Applications, 2021, San Diego, California, United States

Abstract

In order to suppress the polishing defects of single crystal silicon optical elements, the material removal mechanism and defect suppression technology in the polishing process of single crystal silicon were carried out. Based on the nanoindentation test, the mechanical properties of single crystal silicon were analyzed. Based on the X-ray photoelectron spectroscopy (XPS) test, the chemical element on the processed surface was studied, and then the chemical-mechanical coordinated removal mechanism in the polishing of single crystal silicon was analyzed. Then, this paper carried out the research on the bonnet polishing process of single crystal silicon optical elements. According to the experimental results, the influence of slurry characteristics on the removal efficiency and defects had been obtained, and an efficient processing method by bonnet polishing for obtaining high quality single crystal silicon elements was mastered.

Citation Download Citation

Bo Zhong, Nan Zheng, Jie Li, and Xian-hua Chen "Material removal mechanism of single crystal silicon by bonnet polishing", Proc. SPIE 11815, Novel Optical Systems, Methods, and Applications XXIV, 118150C (7 September 2021); https://doi.org/10.1117/12.2594614

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