Presentation
2 August 2021 Optical injection of spin current in direct bandgap GeSn
Author Affiliations +
Abstract
Recent progress in the development of direct band gap GeSn is exploited to investigate the optical injection and coherent control of spin currents in this group IV semiconductor. The analysis of these properties could provide essential information for future innovative optical photon-to-spin conversion interfaces, long-sought after for entanglement distribution. A 30-band k•p model is used to evaluate the electronic properties in the material for a relatively wide range of energies, and a linear tetrahedron method is employed for the Brillouin zone integrations. Carrier, spin, current, and spin current injection rates are calculated for a bichromatic field of frequencies ω and 2ω.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gabriel Fettu, John Sipe, and Oussama Moutanabbir "Optical injection of spin current in direct bandgap GeSn", Proc. SPIE 11806, Quantum Nanophotonic Materials, Devices, and Systems 2021, 118060B (2 August 2021); https://doi.org/10.1117/12.2594793
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