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Photodetectors harnessing hot carrier generation on surface plasmon resonant nanoantennas are a promising avenue to achieving sub-bandgap imaging at room temperature. However, efficient extraction of plasmonic hot carriers under low-energy infrared (IR) excitation predicates careful design of Schottky interfaces. This work reports on the simulation-guided fabrication of Au (i) planar diodes and (ii) embedded IR nanoantennas interfaced with both n-/p-type Si and GaAs semiconductors in order to elucidate the impact of their electronic properties on photocurrent generation.
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Scott Criswell, Timothy A. Morgan, Gregory T. Forcherio, Samantha R. Koutsares, Dmitry A. Kozak, Joshua D. Caldwell, Jason G. Valentine, "Engineering three-dimensional Schottky interfaces towards efficient extraction of plasmonic hot electrons," Proc. SPIE 11802, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVIII, 1180203 (5 August 2021); https://doi.org/10.1117/12.2594262