Analysis of BTO-on-Si-waveguides for energy-efficient electro-optical modulators

Patrick Steglich; Andreas Mai

doi:10.1117/12.2592501

18 April 2021 Analysis of BTO-on-Si-waveguides for energy-efficient electro-optical modulators

Patrick Steglich, Andreas Mai

Proceedings Volume 11775, Integrated Optics: Design, Devices, Systems and Applications VI; 117750L (2021) https://doi.org/10.1117/12.2592501
Event: SPIE Optics + Optoelectronics, 2021, Online Only

Abstract

In this work, we analyze a horizontal slot waveguide configuration, which evaluates the potential for an integration of barium titanate (BTO) based modulators into a photonic integrated circuit (PIC) technology based on siliconon- insulator (SOI) wafer. The waveguide configuration consists of a doped crystal silicon layer, a Ba_0:7Sr_0:3TiO₃ (BST) template layer, a barium titanate (BTO) layer and a doped poly-silicon layer on top. In contrast to current approaches, we analyze the performance of this waveguide-structure by using a vertical electrode configuration that is formed by the doped silicon layer. In this way, the electric field strength is dramatically increased compared to current horizontal electrode configuration.

Conference Presentation

Citation Download Citation

Patrick Steglich and Andreas Mai "Analysis of BTO-on-Si-waveguides for energy-efficient electro-optical modulators", Proc. SPIE 11775, Integrated Optics: Design, Devices, Systems and Applications VI, 117750L (18 April 2021); https://doi.org/10.1117/12.2592501

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