Hybrid silicon photonics based on doped-crystalline oxides for on-chip light amplification

Alicia Ruiz-Caridad; Guillaume Marcaud; Christian Lafforgue; Xavier Le Roux; Joan Manel Ramirez; Elena Durán-Valdeiglesias; Ludovic Largeau; Thomas Maroutian; Sylvia Matzen; Stephane Collin; Carlos Alonso-Ramos; Guillaume Agnus; Sylvain Guerbert; Stephane Monfray; Frederic Boeuf; Vladyslav Vakarin; Eric Cassan; Delphine Marris-Morini; Philippe Lecoeur; Laurent Vivien

doi:10.1117/12.2589287

19 April 2021 Hybrid silicon photonics based on doped-crystalline oxides for on-chip light amplification

Alicia Ruiz-Caridad, Guillaume Marcaud, Christian Lafforgue, Xavier Le Roux, Joan Manel Ramirez, Elena Durán-Valdeiglesias, Ludovic Largeau, Thomas Maroutian, Sylvia Matzen, Stephane Collin, Carlos Alonso-Ramos, Guillaume Agnus, Sylvain Guerbert, Stephane Monfray, Frederic Boeuf, Vladyslav Vakarin, Eric Cassan, Delphine Marris-Morini, Philippe Lecoeur, Laurent Vivien

Author Affiliations +

Proceedings Volume 11775, Integrated Optics: Design, Devices, Systems and Applications VI; 117750B (2021) https://doi.org/10.1117/12.2589287
Event: SPIE Optics + Optoelectronics, 2021, Online Only

Abstract

Silicon photonics has been largely developed as a platform to address the future challenges in several applications including datacom, sensing or optical communications, among others. However, the properties of silicon itself is not enough to overcome all limitations in terms of speed, power consumption and scalability. New strategies have then been encouraged based on the hybrid integration of new materials in the silicon photonics platform. In this paper, we will introduce the recent advances in the hybrid integration of doped crystalline-oxides on silicon and silicon nitride waveguides. Especially, Yttria-stabilized zirconia (YSZ) with a lattice parameter compatible with the silicon lattice has been considered because it exhibits promising linear and nonlinear optical properties: low propagation loss, no two photon absorption (TPA) due to its large bandgap energy, a large transparency window from the ultraviolet to the mid-infrared and a good Kerr effect. Furthermore, YSZ can be doped with many dopants to develop active photonic devices with strong second- and third-order nonlinearities and light emission. We have recently demonstrated propagation loss in YSZ waveguides as low as 2dB/cm at a wavelength of 1380 nm, a nonlinear refractive index (Kerr effect) comparable with the SiN coefficient and light amplification in Er3+ doped YSZ on SiN waveguides. The recent results are very promising to pave the way for the development of low cost and low power consumption devices.

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Alicia Ruiz-Caridad, Guillaume Marcaud, Christian Lafforgue, Xavier Le Roux, Joan Manel Ramirez, Elena Durán-Valdeiglesias, Ludovic Largeau, Thomas Maroutian, Sylvia Matzen, Stephane Collin, Carlos Alonso-Ramos, Guillaume Agnus, Sylvain Guerbert, Stephane Monfray, Frederic Boeuf, Vladyslav Vakarin, Eric Cassan, Delphine Marris-Morini, Philippe Lecoeur, and Laurent Vivien "Hybrid silicon photonics based on doped-crystalline oxides for on-chip light amplification", Proc. SPIE 11775, Integrated Optics: Design, Devices, Systems and Applications VI, 117750B (19 April 2021); https://doi.org/10.1117/12.2589287

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KEYWORDS

Silicon photonics

Oxides

Silicon

Waveguides

Kerr effect

Light wave propagation

Refractive index

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