Anodic fluoride passivation ofInAs/GaSb superlattice for mid-/short-wavelength dual-color infrared detector

Lixue Zhang; Guansheng Yao; Xubo Zhu; Xiancun Cao; Yanqiu Lv

doi:10.1117/12.2588327

12 March 2021 Anodic fluoride passivation ofInAs/GaSb superlattice for mid-/short-wavelength dual-color infrared detector

Lixue Zhang, Guansheng Yao, Xubo Zhu, Xiancun Cao, Yanqiu Lv

Author Affiliations +

Proceedings Volume 11763, Seventh Symposium on Novel Photoelectronic Detection Technology and Applications; 117639Z (2021) https://doi.org/10.1117/12.2588327
Event: Seventh Symposium on Novel Photoelectronic Detection Technology and Application 2020, 2020, Kunming, China

Abstract

Herein, we report a novel approach to passivation of InAs/GaSb superlattice for mid-short wavelength dual-color infrared detector. One of the major challenges faced by InAs/GaSb superlattice devices arises owing to the large number of surface states that are generated. Surface passivation and subsequent capping of the surfaces are absolutely essential for any practical applicability of this material system. As evidenced by the comparison of unpassivated and passivated InAs/ GaSb superlattice mid-short wavelength dual-color infrared photodiodes. The surface passivation methods include zinc sulfide (ZnS) coating after anodic oxide, and ZnS coating after fluoride passivation. InAs/GaSb superlattice infrared materials were grown by molecular beam epitaxy on GaSb (100) substrates. A GaSb buffer layer, which can decrease the occurrence of defects with similar pyramidal structure, was grown for optimized superlattice growth condition. The reliability of passivation by anodic fluoride was confirmed by AES. The leakage current as a function of bias voltage (J–V) for superlattice diodes obtained using different passivation methods has been examined at 77 K. The best performance was demonstrated by the ZnS after anodic fluoride passivation.

Citation Download Citation

Lixue Zhang, Guansheng Yao, Xubo Zhu, Xiancun Cao, and Yanqiu Lv "Anodic fluoride passivation ofInAs/GaSb superlattice for mid-/short-wavelength dual-color infrared detector", Proc. SPIE 11763, Seventh Symposium on Novel Photoelectronic Detection Technology and Applications, 117639Z (12 March 2021); https://doi.org/10.1117/12.2588327

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