Presentation
12 April 2021 Antimonide based avalanche photodiodes
Author Affiliations +
Abstract
There is a lot of interest in developing low noise avalanche photodiodes (APDs) in the short wave infrared (1.5-3 microns) and mid-wave infrared (3-5 microns). State of the art APDs are are based on based on interband transitions in mercury cadmium telluride (MCT, HgCdTe) with large multiplication gains and low excess noise factors due to the favorable bandstructure that promotes single carrier impact ionization. However, their dark currents are high (3-5e-4A/cm2 at a gain of 10 at 125K) that requires cryogenic cooling. We have investigated the multiplication characteristics of three different multipliers on InP substrate (AlGaInAs (M1), AlGaAsSb (M2) and AlInAsSb (M3)). We have demonstrated decrease in the excess noise factors using ternary superlattices and extremely low excess noise factors (k~0.01) and low dark current density (~10 A/cm2) at 300K. We will discuss the research challenges associated with the design, growth, fabrication and radiometric characterization of these APDs
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sanjay Krishna "Antimonide based avalanche photodiodes", Proc. SPIE 11741, Infrared Technology and Applications XLVII, 117410T (12 April 2021); https://doi.org/10.1117/12.2588360
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KEYWORDS
Avalanche photodetectors

Avalanche photodiodes

Mercury cadmium telluride

Signal to noise ratio

Ionization

LIDAR

Mid-IR

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