Study on the detection ability of laser ultrasonic SAFT technology for lead internal defects

Wen He; JinJing Yuan; Jianzong He; Ting Yang; Haohui He; Wan Zhang; Hongchao Zhang

doi:10.1117/12.2587582

2 December 2020 Study on the detection ability of laser ultrasonic SAFT technology for lead internal defects

Wen He, JinJing Yuan, Jianzong He, Ting Yang, Haohui He, Wan Zhang, Hongchao Zhang

Proceedings Volume 11717, 24th National Laser Conference & Fifteenth National Conference on Laser Technology and Optoelectronics; 117173B (2020) https://doi.org/10.1117/12.2587582
Event: 24th National Laser Conference & Fifteenth National Conference on Laser Technology and Optoelectronics, 2020, Shanghai, China

Abstract

Lead has good corrosion resistance and sealing property, which is often used in cable lead sealing process and various processes. In the production process, there may be small defects in the lead products, which may affect the quality of the products. Therefore, it is of great economic significance to inspect them to ensure their reliability. Due to the variety of lead products, the use of traditional ultrasonic detection is limited, and laser ultrasound has the ability to detect all kinds of surface samples. However, when the inner defect size of lead products is submillimeter or smaller, the echo signal-to-noise ratio(SNR) is low, so the traditional laser ultrasonic technology is difficult to locate the defects. In this paper, the synthetic aperture focusing (SAFT) technology is applied to the laser ultrasonic detection of lead internal defects. The minimum defect identification ability and resolution ability of laser ultrasonic combined with SAFT are studied, which provides reference for practical application.

Citation Download Citation

Wen He, JinJing Yuan, Jianzong He, Ting Yang, Haohui He, Wan Zhang, and Hongchao Zhang "Study on the detection ability of laser ultrasonic SAFT technology for lead internal defects", Proc. SPIE 11717, 24th National Laser Conference & Fifteenth National Conference on Laser Technology and Optoelectronics, 117173B (2 December 2020); https://doi.org/10.1117/12.2587582

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available