Dark current mechanism of medium wave HgCdTe avalanche photodiode

Liao Yang; Lu Chen; Huijun Guo; Dan Yang; Chuan Shen; Honglei Chen; Chun Lin; Ruijun Ding; Li He

doi:10.1117/12.2587565

2 December 2020 Dark current mechanism of medium wave HgCdTe avalanche photodiode

Liao Yang, Lu Chen, Huijun Guo, Dan Yang, Chuan Shen, Honglei Chen, Chun Lin, Ruijun Ding, Li He

Proceedings Volume 11717, 24th National Laser Conference & Fifteenth National Conference on Laser Technology and Optoelectronics; 1171737 (2020) https://doi.org/10.1117/12.2587565
Event: 24th National Laser Conference & Fifteenth National Conference on Laser Technology and Optoelectronics, 2020, Shanghai, China

Abstract

The HgCdTe avalanche photodiode (APD) with built-in gain mechanism has great application prospects in the field of weak light signal detection. Any dark current will be converted into noise affecting the work efficiency of photodetectors. Therefore, the study of dark current mechanism is an important way to obtain high performance HgCdTe APD. In this paper, the photoelectric detection mechanism of planar junction electron injection HgCdTe APD is systematically studied, focusing on two aspects of structural optimization design and performance improvement. The dependence of device performance parameters on structure parameters is obtained by comparing the simulation results and experimental results. The lower the trap concentration, the smaller the dark current under small reverse bias voltage is, and the higher the operation voltage is. The dark current density of HgCdTe APD array is about 10^-8 A/cm² under small bias voltage. In addition to the material parameters, the dark current is mainly related to the internal electric field, which is affected by the width and doping concentration of the depletion region. The results show that device structure is the major determinant for the performance difference of HgCdTe APD. The structural optimization direction of high-performance HgCdTe APD is to further suppress the local electric field and reduce the dark current by adjusting the process.

Citation Download Citation

Liao Yang, Lu Chen, Huijun Guo, Dan Yang, Chuan Shen, Honglei Chen, Chun Lin, Ruijun Ding, and Li He "Dark current mechanism of medium wave HgCdTe avalanche photodiode", Proc. SPIE 11717, 24th National Laser Conference & Fifteenth National Conference on Laser Technology and Optoelectronics, 1171737 (2 December 2020); https://doi.org/10.1117/12.2587565

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