Paper
2 December 2020 Research on optically pumped vertical-external-cavity-surface-emitting-semiconductor laser at 1178 nm
Hao-Da Ma, Qing-Shuang Zong, Qi Bian, Huayu Liu, Nan Zong, Yong Bo, Qin-Jun Peng
Author Affiliations +
Proceedings Volume 11717, 24th National Laser Conference & Fifteenth National Conference on Laser Technology and Optoelectronics; 117172A (2020) https://doi.org/10.1117/12.2587262
Event: 24th National Laser Conference & Fifteenth National Conference on Laser Technology and Optoelectronics, 2020, Shanghai, China
Abstract
A compact optically pumped vertical-external-cavity surface-emitting-semiconductor laser (OP-VECSEL) at 1178 nm for μs pulsed operation is reported for the first time. The laser employed a V-shaped resonator with the cavity length of 300 mm, pumped by a 200 μs pulse 808 nm laser operating at a repetition rate of 1 kHz. The maximum output power about 0.78W was obtained at pump power of ~5.9 W. The corresponding conversion efficiency from absorbed pump power to 1178 nm was 13.2%. Further, by the intra-cavity frequency doubling of the VECSEL, a μs pulsed 589 nm laser has broad prospects in the application of sodium guide stars.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hao-Da Ma, Qing-Shuang Zong, Qi Bian, Huayu Liu, Nan Zong, Yong Bo, and Qin-Jun Peng "Research on optically pumped vertical-external-cavity-surface-emitting-semiconductor laser at 1178 nm", Proc. SPIE 11717, 24th National Laser Conference & Fifteenth National Conference on Laser Technology and Optoelectronics, 117172A (2 December 2020); https://doi.org/10.1117/12.2587262
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