Large area ≫ 1 cm2 light trapping patterns for Si solar cells

Jovan Maksimovic; Jingwen Hu; Soon Hock Ng; Tomas Katkus; Gediminas Seniutinas; Yoshiaki Nishijima; Sajeev John; Saulius Juodkazis

doi:10.1117/12.2578303

5 March 2021 Large area ≫ 1 cm² light trapping patterns for Si solar cells

Jovan Maksimovic, Jingwen Hu, Soon Hock Ng, Tomas Katkus, Gediminas Seniutinas, Yoshiaki Nishijima, Sajeev John, Saulius Juodkazis

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Proceedings Volume 11696, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics XIV; 116960T (2021) https://doi.org/10.1117/12.2578303
Event: SPIE OPTO, 2021, Online Only

Abstract

Photonic crystal patterns for light trapping in Si solar cells are developed via different process flows: 1) step-and-repeat projection lithography with lift-off or 2) laser ablation and subsequent etching dry or/and wet. Both methods are amenable for large area (2×2 cm²) fabrication and can be used to break the ray-optics light trapping limit. This is required to surpass the record high efficiency ∼ 26% of solar-to-electrical power conversion of Si solar cells and approach the theoretical limit of ∼ 30%. Also, standard electron beam lithography (EBL) was used to define Si₃N₄ or Cr masks for wet KOH etching on silicon-on-insulator (SOI) and Si wafers. Direct laser writing of the etch mask by ablation (10 nJ, 515 nm, 230 fs pulses) has an advantage due to its scalability. The large area patterning is important for industrial application of direct laser writing of light trapping patterns in solar cells and absorbers/emitters for the IR spectral range.

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Jovan Maksimovic, Jingwen Hu, Soon Hock Ng, Tomas Katkus, Gediminas Seniutinas, Yoshiaki Nishijima, Sajeev John, and Saulius Juodkazis "Large area ≫ 1 cm² light trapping patterns for Si solar cells", Proc. SPIE 11696, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics XIV, 116960T (5 March 2021); https://doi.org/10.1117/12.2578303

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