PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
We study shallow and deep levels in carbon-doped hexagonal boron nitride crystals precipitated from a molten metal solution in a high-temperature furnace. Reflectance and photoluminescence under deep ultraviolet excitation are complemented by spatially resolved experiments by means of a scanning confocal micro-photoluminescence setup operating in the ultraviolet. Isotopically controlled carbon doping does not induce any energy shift of the well-known deep-level emission at 4.1 eV. Our detailed characterization in a series of carbon-doped crystals reveals that the incorporation of carbon during the growth process results in a distinct class of shallow and deep levels in hexagonal boron nitride, calling into question the exact role of carbon in the growth of hexagonal boron nitride and its direct or indirect influence on the formation of the crystal defects.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Thomas Pelini, Christine Elias, Ryan Page, James H. Edgar, Pierre Valvin, Bernard Gil, Guillaume Cassabois, "Shallow and deep levels in hexagonal boron nitride with carbon impurities," Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 1168621 (6 March 2021); https://doi.org/10.1117/12.2578445