Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices. Antiparallel spin sublattices in antiferromagnets lead to the insensitivity to magnetic field perturbations, multi-level stability and ultra-fast spin dynamics. However, these features also make the characterization of antiferromagnetic materials, in particular of thin metallic films suitable for spintronics, a major challenge [1]. In this contribution we show how thin films of compensated antiferromagnetic metal CuMnAs, where non-volatile antiferromagnetic memory functionality has been demonstrated [5], can be studied by pump-probe experiments [3-5].
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