Carrier lifetime characterization in solar cell and light emitting diode materials by time-resolved photoluminescence and differential transmission is of high importance, indicating cost-efficient streak camera suitable for such tests would be highly demanded. In this work an electro-optic deflecting device is extended to full functionality streak camera operating in wide spectral range (200-2000 nm) by using electro-optic DKDP crystals. Setup, consisting of picosecond laser for sample excitation, electro-optic deflector and imaging spectrograph with silicon and InGaAs cameras, allows spectral and temporal imaging of recombination dynamics in semiconductor materials, with variable bandgap and composition (tested on metal-halide perovskite crystal), achieving temporal resolution up to 50 ps. For the case of time-resolved differential transmission, broadband <50 ps pulsed or CW xenon light source can be used for absorption change probing.
|