The comparison of two kinds of InSb etching technology

Hai-yan Li; Zhen Tan

doi:10.1117/12.2579755

5 November 2020 The comparison of two kinds of InSb etching technology

Hai-yan Li, Zhen Tan

Proceedings Volume 11563, AOPC 2020: Infrared Device and Infrared Technology; 115630G (2020) https://doi.org/10.1117/12.2579755
Event: Applied Optics and Photonics China (AOPC 2020), 2020, Beijing, China

Abstract

With the development of InSb infrared focal plane array (IRFPA) detectors, the scale of the detector array is growing larger, the size of the pixel and the space between pixels are becoming smaller. To realize the fabrication of high quality mesa-structure device, the paper focuses on the study of inductively coupled plasma ( ICP) dry etching technology using etching gas system based on methane and chlorine to realize mesa etching of InSb material. The paper compares the etching principle of two etching gas systems as CH₄/H₂/Ar and BCl₃/Ar. Etching results such as etching morphology, etching rate, etching surface stoichiometric ratio and I-V test are compared. Through the research, BCl₃/Ar gas system is found faster in etching rate. Etching with both kind of gas systems can result in smooth etching surface, normal stoichiometric ratio and qualified I-V test result which satisfy technological requirements.

Citation Download Citation

Hai-yan Li and Zhen Tan "The comparison of two kinds of InSb etching technology", Proc. SPIE 11563, AOPC 2020: Infrared Device and Infrared Technology, 115630G (5 November 2020); https://doi.org/10.1117/12.2579755

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