Paper
10 October 2020 Design of GaN surface emitting laser based on angular-symmetry-breaking concentric-ring surface grating
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Abstract
A GaN surface emitting laser (SEL) based on angular-symmetry-breaking concentric-ring surface grating (ASB-CRSG) is proposed in this paper. The second-order CRSG located in the p-contact and p-cladding of an EPI wafer of GaN FP laser is adopted to select the radial mode and couple the optical power vertically out of the laser cavity. As the zero-order azimuthal CRSG with a two-lobe far field has the lowest mode loss in the angular-symmetric CRSG, the first-order ASB is adopted by the removal of two circular sections of GaN epitaxial layers to break the angular symmetry of the lasing modes. The simulation results show that degenerate modes in angular-symmetric CRSG have different mode losses with the help of the first-order ASB and the bigger breaking angles of CRSG results to higher loss difference between the first-order and other azimuthal modes. The loss and divergence angle decrease with the increasing area of CRSG, and the deeper CRSG results to the higher out-plane coupling. The first-order azimuthal mode has the lowest mode loss whose value is ~ 84% of that of the second-lowest-loss mode. A single-lobe far-field with a divergence angle of 1.33° in the wavelength of 450nm will be realized by an ASB-CRSG with the diameter of 10.6μm, the breaking angles of 12° and the depth of 325nm. Therefore, the single-mode operation of the first-order azimuthal mode which has a single-lobe far field is expected with the combination of the second-order CRSG and the first-order ASB.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Haixu Wang, Jian Wang, Qichao Wang, Changzheng Sun, Bing Xiong, Lai Wang, Yi Luo, Zhibiao Hao, Yanjun Han, Hongtao Li, and Jiadong Yu "Design of GaN surface emitting laser based on angular-symmetry-breaking concentric-ring surface grating", Proc. SPIE 11545, Semiconductor Lasers and Applications X, 1154503 (10 October 2020); https://doi.org/10.1117/12.2571935
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KEYWORDS
Gallium nitride

Optical design

Laser resonators

Semiconducting wafers

Wafer-level optics

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