Graphene photodetectors based on interfacial photogating effect with high sensitivity

Yifei Wang; Vinh X. Ho; Zachary N. Henschel; Prashant Pradhan; Leslie Howe; Michael P. Cooney; Nguyen Q. Vinh

doi:10.1117/12.2569035

22 August 2020 Graphene photodetectors based on interfacial photogating effect with high sensitivity

Yifei Wang, Vinh X. Ho, Zachary N. Henschel, Prashant Pradhan, Leslie Howe, Michael P. Cooney, Nguyen Q. Vinh

Proceedings Volume 11503, Infrared Sensors, Devices, and Applications X; 1150306 (2020) https://doi.org/10.1117/12.2569035
Event: SPIE Optical Engineering + Applications, 2020, Online Only

Abstract

Graphene-based photodetectors have attracted attention for realizing optoelectronic devices including photodetectors. We report a graphene field effect transistor on silicon for broadband light detection from the ultraviolet to near-infrared region, which is compatible with the silicon technology and does not need a complicated fabrication process. The photodetectors show an improved responsivity. Specifically, fabricated graphene photodetectors shows a photo-responsivity of ~980 A/W at room temperature. These results provide a promising for the development of graphene-based optoelectronic applications with the broadband photodetection from the ultraviolet to near-infrared region.

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Citation Download Citation

Yifei Wang, Vinh X. Ho, Zachary N. Henschel, Prashant Pradhan, Leslie Howe, Michael P. Cooney, and Nguyen Q. Vinh "Graphene photodetectors based on interfacial photogating effect with high sensitivity", Proc. SPIE 11503, Infrared Sensors, Devices, and Applications X, 1150306 (22 August 2020); https://doi.org/10.1117/12.2569035

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