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We present recent progress on novel mid-infrared (MIR) light emitters and detectors. Optimized heterostructure and high-quality crystal growth allow for room temperature operation of interband cascade lasers (ICLs) with lasing wavelengths 𝜆 ≥ 6 μm. They employ asymmetric W-shaped optical quantum wells comprising highly strained layers of InAs/GaInSb/InAs with broken bandgap alignment. Furthermore, we discuss novel interband cascade detectors (ICDs) and resonant tunneling diode photodetectors (RTD-PDs) for MIR light detection. Different superlattice (SL) absorber design strategies for ICD cut-off wavelengths exceeding 𝜆 ≥ 7.0 μm are presented. SL absorbers ranging from standard InAs/GaSb SL to M-/W-shaped SL absorbers employing ternary barriers are compared.
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Andreas Bader, Andreas Pfenning, Anne Schade, Georg Knebl, Robert Weih, Yaksh Rawal, Lukas Worschech, Fabian Hartmann, Sven Höfling, "Progress on mid-infrared optoelectronic devices: interband cascade lasers, interband cascade detectors, and resonant tunneling diodes," Proc. SPIE 11502, Infrared Remote Sensing and Instrumentation XXVIII, 115020K (20 August 2020); https://doi.org/10.1117/12.2570729