Accurate probation of carrier mobility and device operations in organic transistors

Chuan Liu

doi:10.1117/12.2569333

20 August 2020 Accurate probation of carrier mobility and device operations in organic transistors

Chuan Liu

Proceedings Volume 11476, Organic and Hybrid Field-Effect Transistors XIX; 114760W (2020) https://doi.org/10.1117/12.2569333
Event: SPIE Organic Photonics + Electronics, 2020, Online Only

Abstract

For non-ideal field-effect transistors (FETs) or thin-film transistors (TFTs), conventional current-voltage characterizations do not accurately probe charge transport, particularly for newly developed semiconductors. Here, we explore the device physics of non-uniformly accumulated FETs and develop the generalized gated four-probe (G-GFP) technique, which detects dynamic change in carrier accumulation and transport. In experiments, FETs with controllable injection are fabricated and the G-GFP technique proves to avoid the errors brought about by conventional characterizations, to exclude the temperature-dependent injection, to detect in-situ the channel potential, and to clarify the gate-dependent mobility and origin of non-ideal characteristics.

Conference Presentation

Citation Download Citation

Chuan Liu "Accurate probation of carrier mobility and device operations in organic transistors", Proc. SPIE 11476, Organic and Hybrid Field-Effect Transistors XIX, 114760W (20 August 2020); https://doi.org/10.1117/12.2569333

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