Vertical heterostructures based monolayers of dielectric and semiconductor graphene-like 2D materials: atomic structure, energy stability and electronic properties

Mikhail M. Slepchenkov; Olga E. Glukhova; Dmitriy A. Kolosov; Dmitriy S. Shmygin

doi:10.1117/12.2564505

9 April 2020 Vertical heterostructures based monolayers of dielectric and semiconductor graphene-like 2D materials: atomic structure, energy stability and electronic properties

Mikhail M. Slepchenkov, Olga E. Glukhova, Dmitriy A. Kolosov, Dmitriy S. Shmygin

Author Affiliations +

Proceedings Volume 11458, Saratov Fall Meeting 2019: Laser Physics, Photonic Technologies, and Molecular Modeling; 114580Z (2020) https://doi.org/10.1117/12.2564505
Event: Saratov Fall Meeting 2019: VII International Symposium on Optics and Biophotonics, 2019, Saratov, Russian Federation

Abstract

In this paper, new structural types of vertical heterostructures based on monolayers of semiconductor and dielectric 2D graphene-like materials are proposed. Using computer modeling methods, it is found that monolayers of borophane, blue phosphorus and gallium nitride can be used to form bilayer and three-layer vertical heterostructures of the following type: gallium nitride/borophane and gallium nitride/blue phosphorus bilayer structures, as well as gallium nitride/blue phosphorus/gallium nitride three-layer structures. It is shown that the constructed atomistic models of vertical heterostructures are energetically stable configurations. It was revealed that the proposed types of vertical heterostructures are characterized by the presence of an energy gap from 0.5 to 1.3 eV in size, which indicates their semiconductor properties.

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Mikhail M. Slepchenkov, Olga E. Glukhova, Dmitriy A. Kolosov, and Dmitriy S. Shmygin "Vertical heterostructures based monolayers of dielectric and semiconductor graphene-like 2D materials: atomic structure, energy stability and electronic properties", Proc. SPIE 11458, Saratov Fall Meeting 2019: Laser Physics, Photonic Technologies, and Molecular Modeling, 114580Z (9 April 2020); https://doi.org/10.1117/12.2564505

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KEYWORDS

Heterojunctions

Gallium

Phosphorus

Gallium nitride

Semiconductors

Dielectrics

Electronic components

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