Low series resistance N-type AlGaAs/AlAs distributed Bragg reflector grown by MOCVD

Zhenyu Wen; Jianjun Li; Hongkang Cao; Jun Wang; Xiaoqian Wang

doi:10.1117/12.2543342

12 March 2020 Low series resistance N-type AlGaAs/AlAs distributed Bragg reflector grown by MOCVD

Zhenyu Wen, Jianjun Li, Hongkang Cao, Jun Wang, Xiaoqian Wang

Proceedings Volume 11440, 2019 International Conference on Optical Instruments and Technology: Micro/Nano Photonics: Materials and Devices; 114400A (2020) https://doi.org/10.1117/12.2543342
Event: 2019 International Conference on Optical Instruments and Technology, 2019, Beijing, China

Abstract

N-type AlGaAs Bragg reflectors (DBRs) are an important part of optoelectronic devic-type AlGaAs Bragg reflectors (DBRs) are an important part of optoelectronic devices such as light-emitting diodes and vertical cavity surface emitting lasers and reducing the series resistance is critical to the performance of the device. In this paper, four kinds of modulation-doped 20-cycle N-type Al_0.5Ga_0.5As/AlAs DBR were grown on N-type GaAs substrate by MOCVD. The white light reflection spectrum measurement results show that the peak wavelength of the epitaxial wafer meets the requirements of red light band. The upper and lower electrodes were prepared for each of the four structures, and the IV characteristics were tested after Cleavaged. The results show that the series resistance of the epitaxial wafer with the AlGaAs layer concentration of 1×10¹⁹ cm^-3 and the AlAs layer doping concentration of 5×10¹⁸ cm^-3 is the smallest. The resistance value was 1.36×10 ^-6 Ω cm ². It shows that the modulation doping method can effectively reduce the series resistance of DBR.

Citation Download Citation

Zhenyu Wen, Jianjun Li, Hongkang Cao, Jun Wang, and Xiaoqian Wang "Low series resistance N-type AlGaAs/AlAs distributed Bragg reflector grown by MOCVD", Proc. SPIE 11440, 2019 International Conference on Optical Instruments and Technology: Micro/Nano Photonics: Materials and Devices, 114400A (12 March 2020); https://doi.org/10.1117/12.2543342

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