Polyimide-Embedded Semiconductor Ring Lasers.

Andrzej F. Jezierski; Peter J.R. Laybourn

doi:10.1117/12.961884

6 December 1989 Polyimide-Embedded Semiconductor Ring Lasers.

Andrzej F. Jezierski, Peter J.R. Laybourn

Proceedings Volume 1141, 5th European Conf on Integrated Optics: ECIO '89; (1989) https://doi.org/10.1117/12.961884
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France

Abstract

The fabrication of integrated ring semiconductor lasers has been simplified by embedding the etched rib waveguide structures in polyimide and overcoating with a gold bonding layer. Structures defined by optical lithography lased successfully, while e-beam defined devices with very narrow rib structures were optically lossy, resulting in increased threshold current and evidence of second quantised state operation.

Citation Download Citation

Andrzej F. Jezierski and Peter J.R. Laybourn "Polyimide-Embedded Semiconductor Ring Lasers.", Proc. SPIE 1141, 5th European Conf on Integrated Optics: ECIO '89, (6 December 1989); https://doi.org/10.1117/12.961884

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