Paper
18 December 2019 High-density and uniform-size GaN/Al0.5GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
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Proceedings Volume 11336, AOPC 2019: Nanophotonics; 113360E (2019) https://doi.org/10.1117/12.2547302
Event: Applied Optics and Photonics China (AOPC2019), 2019, Beijing, China
Abstract
Self-assembled GaN/Al0.5GaN quantum dots (QDs) were grown on a c-plane sapphire by Stranski- Krastanov (S-K) mode in metalorganic vapor-phase epitaxy (MOCVD). The growth window for GaN QDs by S-K is very narrow owing to the small lattice mismatch (1.25%) of the GaN/Al0.5GaN. In this work, we find that the growth duration and growth interruption possess distinct and regular effects on the size and density of GaN/Al0.5GaN QDs, which can be utilized as growth optimization windows. In the end, the uniform-size GaN QDs with a density of 1.7×1010 cm-2 are achieved. A strong PL peak at 3.36eV originated from the uncapped GaN/Al0.5GaN QDs is observed, compared with the peak at 4.5eV assigned to the underlying Al0.5GaN template.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhiqiang Qi, Haocheng Sun, and Wenliang Hu "High-density and uniform-size GaN/Al0.5GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition", Proc. SPIE 11336, AOPC 2019: Nanophotonics, 113360E (18 December 2019); https://doi.org/10.1117/12.2547302
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KEYWORDS
Gallium nitride

Aluminum

Quantum dots

Aluminum nitride

Epitaxy

Applied physics

Atomic force microscopy

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