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24 March 2020 Resistless EUV lithography: patterning with EUV-induced surface reactions (Conference Presentation)
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Abstract
In this work, we present a novel resistless patterning technique on hydrogen-terminated Si (100) using EUV-induced surface reaction. We has successfully demonstrated a direct Si pattern transfer of half-pitch 75 nm Si gratings using the EUV resistless patterning technique. The EUV-induced surface reactions could achieve direct patterning on functionalized Si surface and potentially overcome the resolution limitations of conventional photoresists in the semiconductor industry. Moreover, this approach can be used for better understanding of EUV exposure mechanisms by preparing simple molecular systems and studying the EUV-induced reactions.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Li-Ting Tseng, Dimitrios Kazazis, Procopios Constantinou, Taylor Stock, Neil Curson, Steven Schofield, Gabriel Aeppli, and Yasin Ekinci "Resistless EUV lithography: patterning with EUV-induced surface reactions (Conference Presentation)", Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113231M (24 March 2020); https://doi.org/10.1117/12.2552059
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