Presentation + Paper
8 April 2020 Excitation selectivity in model tin-oxo resist: a computational chemistry perspective
Jonathan H. Ma, Han Wang, David Prendergast, Andrew Neureuther, Patrick Naulleau
Author Affiliations +
Abstract
In this preliminary computational chemistry study, we report excitation selectivity in a model tin-oxo molecular resist. Upon impact ionization, organic side chains connected to 6-coordinated tin atoms (located near the charge balancing ligands) are preferentially destabilized. Upon electron addition, conversely, side chains connected to 5-coordinated tin atoms (located on the central belt) are destabilized. Inferring from the binding energies, the ionization induced processes likely have a smaller spatial extent than electron attachment induced process.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jonathan H. Ma, Han Wang, David Prendergast, Andrew Neureuther, and Patrick Naulleau "Excitation selectivity in model tin-oxo resist: a computational chemistry perspective", Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113231F (8 April 2020); https://doi.org/10.1117/12.2553055
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Cited by 1 scholarly publication.
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KEYWORDS
Chemistry

Ionization

Chemical species

Tin

Molecules

Extreme ultraviolet

Absorption

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