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Multiple ASML’s NXE:3400B scanners are installed at the factories and slated to go to a high volume manufacturing (HVM) phase. The latest generation of the scanners NXE:3400C has an improved performance and availability also due to availability improvement of the EUV sources by implementing modularity concept.
In this paper, we provide an overview of a tin laser-produced-plasma (LPP) extreme-ultraviolet (EUV) sources at 13.5nm enabling HVM at the N7 node and beyond. The field performance of the source at 250 watts power including the performance of subsystems such as the Collector and the Droplet Generator will be shown. Progress in the development of key technologies for power scaling towards 500W will be described.
David C. Brandt,Igor Fomenkov, andJayson Stewart
"Progress in availably of NXE:3400B EUVL sources in the field and power scaling towards 500W (Conference Presentation)", Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113230W (24 March 2020); https://doi.org/10.1117/12.2552424
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David C. Brandt, Igor Fomenkov, Jayson Stewart, "Progress in availably of NXE:3400B EUVL sources in the field and power scaling towards 500W (Conference Presentation)," Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113230W (24 March 2020); https://doi.org/10.1117/12.2552424