Characteristics Of High Power GaAlAs Laser Diodes Useful For Space Application

W. S. Streifer; D. F. Welch; D. S. Evans; D. Scifres

doi:10.1117/12.961540

6 October 1989 Characteristics Of High Power GaAlAs Laser Diodes Useful For Space Application

W. S. Streifer, D. F. Welch, D. S. Evans, D. Scifres

Proceedings Volume 1131, Optical Space Communication; (1989) https://doi.org/10.1117/12.961540
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France

Abstract

Single quantum well laser diode arrays with emitting apertures of 200 um have operated up to 8 W cw. Monolithic multi-element arrays with emitting apertures of 1 cm are capable of cw operation up to 76 W cw. Devices fabricated using MOCVD epitaxial growth techniques and highly efficient single quantum well active region structures have exhibited high cw power and high efficiency. Catastrophic power limits of 8 W cw have been demonstrated by a 20 emitter multistripe laser diode with emitting aperture of 200 um. Similar structures consisting of 10 emitters in a 100 um aperture have operated to 6 W cw. (Fig. 1)

Citation Download Citation

W. S. Streifer, D. F. Welch, D. S. Evans, and D. Scifres "Characteristics Of High Power GaAlAs Laser Diodes Useful For Space Application", Proc. SPIE 1131, Optical Space Communication, (6 October 1989); https://doi.org/10.1117/12.961540

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available