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9 March 2020 Influence of Si intermixing on optical properties of Ge on Si and monolithic integration of Ge on Si nanocavity (Conference Presentation)
Chulwon Lee, Hyun Gyu Song, Ki-Young Woo, Daegwang Choi, Yong-Hoon Cho
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Proceedings Volume 11285, Silicon Photonics XV; 112850T (2020) https://doi.org/10.1117/12.2545850
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
We present a temperature dependent optical properties of Ge on Si under influence of Si intermixing and a finding on Δ valley emission. Arrhenius analysis reveals that Si intermixing significantly increase the thermal activation energy of direct valley emission by increasing the energy difference between Γ and L valley. A luminescence peak from Δ valley was revealed from the temperature-dependent study. A clear thermal activation of Δ valley could be observed. We also present monolithically integrated strained Ge nano-cavity fabricated on Si for laser application. The cavity is designed to have strain higher than 1 % and Q ~ 100,000.
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Chulwon Lee, Hyun Gyu Song, Ki-Young Woo, Daegwang Choi, and Yong-Hoon Cho "Influence of Si intermixing on optical properties of Ge on Si and monolithic integration of Ge on Si nanocavity (Conference Presentation)", Proc. SPIE 11285, Silicon Photonics XV, 112850T (9 March 2020); https://doi.org/10.1117/12.2545850
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KEYWORDS
Silicon
Germanium
Optical properties
Etching
Annealing
Chemical analysis
Femtosecond phenomena
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