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9 March 2020 Ge platforms for mid-infrared applications (Conference Presentation)
Jean-Marc Fédéli, Adrien Marchant, Maryse Fournier, Jean-Michel Hartmann, Redouane Amrar, Badhise Ben Bakir, Jean-Guillaume Coutard
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Proceedings Volume 11284, Smart Photonic and Optoelectronic Integrated Circuits XXII; 1128414 (2020) https://doi.org/10.1117/12.2544618
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
Materials such as Si, SiGe, Ge, SiN and AlN can be used for Mid-IR (3 up to 8µm). For LWIR which ranges from 8µm to 13µm, absorption limitations define the materials which can be used, such as Ge, SiGe, chalcogenides, ZnS.... Array waveguide grating devices, with SiGe waveguides cladded by Si or Ge waveguides capped by thick SiGe layers, have been designed and fabricated. They target the simultaneous detection of several gas using arrays of QCL sources. The index difference between the core and the claddings is around 0.5 on the 3-13 µm spectral range. To increase the miniaturization, the index difference has to be increased. So by using cladding material with lower index, new platforms called “Ge on insulator” have been developed such as SiGe on SiN, Ge on SiN, Ge on AlN,
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Jean-Marc Fédéli, Adrien Marchant, Maryse Fournier, Jean-Michel Hartmann, Redouane Amrar, Badhise Ben Bakir, and Jean-Guillaume Coutard "Ge platforms for mid-infrared applications (Conference Presentation)", Proc. SPIE 11284, Smart Photonic and Optoelectronic Integrated Circuits XXII, 1128414 (9 March 2020); https://doi.org/10.1117/12.2544618
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KEYWORDS
Germanium
Mid-IR
Waveguides
Cladding
Quantum cascade lasers
Silicon
Aluminum nitride
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