Paper
20 December 2019 Particle scattering field calculation and analysis based on Mie scattering theory
Author Affiliations +
Proceedings Volume 11209, Eleventh International Conference on Information Optics and Photonics (CIOP 2019); 112094N (2019) https://doi.org/10.1117/12.2549918
Event: Eleventh International Conference on Information Optics and Photonics (CIOP 2019), 2019, Xi'an, China
Abstract
Wafer surface defect detection plays an important role in product yield improvement. Particles are the main source in the majority of defects on wafer. We calculate and analyze the scattering field around the particles on the un-patterned wafer surface by light scattering method. A model was built to calculate an isolated particle based on Mie theory firstly, and another model was built to calculate particle scattering field on a smooth wafer surface based on Bidirectional Reflectance Distribution Function (BRDF). We simulated the scattering field with different parameters set: incidence angle, polarization state and scattering angle channel. The results verify the feasibility of our method to calculate the scattering field.
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Cheng Liao, Shuang Xu, Zhenyuan Xia, and Ruyi Ma "Particle scattering field calculation and analysis based on Mie scattering theory", Proc. SPIE 11209, Eleventh International Conference on Information Optics and Photonics (CIOP 2019), 112094N (20 December 2019); https://doi.org/10.1117/12.2549918
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KEYWORDS
Light scattering

Particles

Scattering

Mie scattering

Semiconducting wafers

Polarization

Diffraction

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