Development and characterization of nanometer film thickness standards

Zhiguo Han; Faguo Liang; Suoyin Li; Yanan Feng; Xiaodong Zhang

doi:10.1117/12.2539090

18 November 2019 Development and characterization of nanometer film thickness standards

Zhiguo Han, Faguo Liang, Suoyin Li, Yanan Feng, Xiaodong Zhang

Proceedings Volume 11189, Optical Metrology and Inspection for Industrial Applications VI; 111890N (2019) https://doi.org/10.1117/12.2539090
Event: SPIE/COS Photonics Asia, 2019, Hangzhou, China

Abstract

Film thickness is an important geometric parameter in semiconductor technology, and the accuracy of its magnitude affects directly the overall performance of the device. In order to accurately control and characterize the film thickness parameters, a set of 2nm~1000nm SiO₂ film thickness standards were developed to carry out measurement technology research. Firstly, a method of growing SiO₂ on pure Si wafer by a thermal oxidation process was used to develop a standard sample of the film thickness, and to evaluate the uniformity and stability. Secondly, the measurement model and method were studied, and the thickness of the film was characterized, based on the spectral ellipsometer. Finally, the uncertainty of measurement results to the standard are evaluated, based on the MCM simulation method. The results show that the uniformity of film thickness is better than 0.3nm, the stability is better than 0.2nm, and the uncertainty is 0.4nm~1.4nm, k=2.

Citation Download Citation

Zhiguo Han, Faguo Liang, Suoyin Li, Yanan Feng, and Xiaodong Zhang "Development and characterization of nanometer film thickness standards", Proc. SPIE 11189, Optical Metrology and Inspection for Industrial Applications VI, 111890N (18 November 2019); https://doi.org/10.1117/12.2539090

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KEYWORDS

Standards development

Reliability

Semiconductors

Silica

Semiconducting wafers

Silicon

Thermal oxidation

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