CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 11182 > Article
Paper
19 November 2019 Performance of high-power diode lasers operated at cryogenic temperature
Pu Zhang, Mingpei Wang, Zhiqiang Nie, Wuhao Yang
Author Affiliations +
Proceedings Volume 11182, Semiconductor Lasers and Applications IX; 111820L (2019) https://doi.org/10.1117/12.2536712
Event: SPIE/COS Photonics Asia, 2019, Hangzhou, China
Abstract
High power diode lasers (HPDLs) have been applied in more and more fields, such as material processing, pumping of solid-state lasers and fiber lasers, medical therapy. With the improvement of output power, efficiency and reliability, thermal management has been one of most critical issue for HPDLs. The junction temperature of a diode laser package has critical effects on laser characteristics, affecting wavelength, output power, threshold current, slope efficiency, and operating lifetime. Lower junction temperature is an effective means to achieve high output power and high electrooptical conversion efficiency of diode lasers. In recent years, high-power diode lasers operated at cryogenic temperature have attracted academic interests. Herein, high power diode lasers suitable at cryogenic temperature and a measurement setup at cryogenic temperature have been developed. The optical-electrical performance of microchannel cooled high power diode lasers from 0℃ ~ -60℃ have been studied theoretically and experimentally. The output power increases 18% and the conversion efficiency increases 6.3% from 0 ºC to -60 ºC. The high diode laser bars operated at cryogenic will be applied in pumping high energy lasers in the future.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Pu Zhang, Mingpei Wang, Zhiqiang Nie, and Wuhao Yang "Performance of high-power diode lasers operated at cryogenic temperature", Proc. SPIE 11182, Semiconductor Lasers and Applications IX, 111820L (19 November 2019); https://doi.org/10.1117/12.2536712
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 9 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconductor lasers
Cryogenics
High power diode lasers
Quantum efficiency
Electro optics
High power lasers
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top