High-NA EUV imaging: challenges and outlook

Bartosz Bilski; Jörg Zimmermann; Matthias Roesch; Jack Liddle; Eelco van Setten; Gerardo Bottiglieri; Jan van Schoot

doi:10.1117/12.2536329

29 August 2019 High-NA EUV imaging: challenges and outlook

Bartosz Bilski, Jörg Zimmermann, Matthias Roesch, Jack Liddle, Eelco van Setten, Gerardo Bottiglieri, Jan van Schoot

Proceedings Volume 11177, 35th European Mask and Lithography Conference (EMLC 2019); 111770I (2019) https://doi.org/10.1117/12.2536329
Event: 35th European Mask and Lithography Conference, 2019, Dresden, Germany

Abstract

The continuation of Moore’s law demands the continuous development of EUV lithography. After the NXE:3400B scanner, currently being inserted in high-volume manufacturing (HVM), the next logical step is to increase the numerical aperture (NA) of the EUV projection optics, from 0.33 to 0.55, resulting in a high-NA EUV scanner. Looking back at the history of lithography tools developed in the last decades, we can see that such an increase of NA is, in relative terms, unprecedented (0.55 = 0.33 + 67%). This significant step forward in the NA is a challenge on many fronts and requires many adaptations. In this paper you will find an overview of the key concepts that make high-NA lithography different on imaging end, how the imaging assures the continued life of Moore’s law for the years to come and what are potential mask-related developments that would contribute to high-NA’s success.

Citation Download Citation

Bartosz Bilski, Jörg Zimmermann, Matthias Roesch, Jack Liddle, Eelco van Setten, Gerardo Bottiglieri, and Jan van Schoot "High-NA EUV imaging: challenges and outlook", Proc. SPIE 11177, 35th European Mask and Lithography Conference (EMLC 2019), 111770I (29 August 2019); https://doi.org/10.1117/12.2536329

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