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6 November 2019 Influence of annealing on electronic properties of thin AlN films deposited by magnetron sputtering method on silicon substrates
P. Firek, M. Waskiewicz, K. Zdunek, J. Szmidt, R. Chodun, K. Nowakowska-Langier
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Proceedings Volume 11176, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019; 111764R (2019) https://doi.org/10.1117/12.2536649
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019, 2019, Wilga, Poland
Abstract
The AlN films were deposited using magnetron (Φ = 100 mm) and pulse power supplier (f = 100 kHz, with modulation of f = 2 kHz; current 3 A). Deposition processes were carried out at pressure of 2 Pa and using Ar/N2 gas mixture. The films were deposited on n-type silicon wafers located in parallel to aluminum target, keeping substrate-target distance at 15 cm. Round, titanium electrodes were evaporated on the top of deposited layers. Thus, metal-insulator-semiconductor (MIS) structures were created with aluminum nitride thin films playing the role of the insulator. Measurements of current-voltage (I-V) characteristics of MIS structures after annealing in different temperatures (300°C, 500°C), allowed to determine the leakage current density and critical electric field intensity (EBR) of investigated layers. Capacitance-voltage (C-V) measurements of the structures allowed to obtain the dielectric constant value (εri) of the films. Ellipsometric measurements allowed to obtain properties of deposited layer like thickness (29 nm), refraction index (1.855) and energy band gap (5.667 eV). Films’ microstructure was additionally studied using scanning electron microscope (SEM) and grazing X-ray diffraction (GXRD).
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P. Firek, M. Waskiewicz, K. Zdunek, J. Szmidt, R. Chodun, and K. Nowakowska-Langier "Influence of annealing on electronic properties of thin AlN films deposited by magnetron sputtering method on silicon substrates", Proc. SPIE 11176, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019, 111764R (6 November 2019); https://doi.org/10.1117/12.2536649
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KEYWORDS
Aluminum nitride
Annealing
Sputter deposition
Dielectrics
Thin films
Silicon
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