Paper
17 May 2019 Research on 940nm kilowatt high efficiency quasi-continuous diode laser bars
Yuliang Zhao, Zhenfu Wang, Guowen Yang, Te Li, Yunfei Song, Luhan Qi, Gang Wang, Yuxian Liu, Bo Li, Shaobo Bai
Author Affiliations +
Proceedings Volume 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019); 1117040 (2019) https://doi.org/10.1117/12.2534034
Event: Fourteenth National Conference on Laser Technology and Optoelectronics, 2019, Shanghai, China
Abstract
High-power GaAs-based semiconductor lasers are the most efficient source of energy for converting electrical into optical power. 940nm diode lasers are used directly or as pump sources for Yb:YAG solid-state lasers, and are widely used in laser cladding and other fields. Improving electro-optic conversion efficiency and reliable output power are urgent requirements for current research hotspots and industrial laser systems. In this paper, we use an asymmetric epitaxial structure of InGaAs/AlGaAs, which reduces the optical loss and resistance, and adopt better cavity surface technology to present 940nm 1-cm quasi-continuous micro-channel cooling (MCC) laser bars. The lasers are tested under a high duty cycle of 9.6% (600us,160Hz) at 25°C with output power of 660.05W, electro-optic conversion efficiency of 64.71% at 600A and slope efficiency of 1.16 W/A. The peak efficiency reaches 72.4%. The increased efficiency results from a lower threshold current and a lower series resistance. Furthermore, the output power of 1025W (1000A) has been confirmed at a duty cycle of 4% (400us,100Hz).
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuliang Zhao, Zhenfu Wang, Guowen Yang, Te Li, Yunfei Song, Luhan Qi, Gang Wang, Yuxian Liu, Bo Li, and Shaobo Bai "Research on 940nm kilowatt high efficiency quasi-continuous diode laser bars", Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 1117040 (17 May 2019); https://doi.org/10.1117/12.2534034
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KEYWORDS
Semiconductor lasers

Resistance

High power lasers

Laser systems engineering

Diode pumped solid state lasers

Structural design

Laser welding

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