A method for compensating lithographic influence of EUV mask blank defects by an advanced genetic algorithm

Ruixuan Wu; Lisong Dong; Rui Chen; Tianchun Ye; Yayi Wei

doi:10.1117/12.2536796

26 September 2019 A method for compensating lithographic influence of EUV mask blank defects by an advanced genetic algorithm

Ruixuan Wu, Lisong Dong, Rui Chen, Tianchun Ye, Yayi Wei

Author Affiliations +

Proceedings Volume 11147, International Conference on Extreme Ultraviolet Lithography 2019; 111471U (2019) https://doi.org/10.1117/12.2536796
Event: SPIE Photomask Technology + EUV Lithography, 2019, Monterey, California, United States

Abstract

Mask defectivity is a critical challenge to the high-volume production of extreme ultraviolet lithography (EUVL). In a similar way to the optical proximity correction (OPC), mask absorber pattern optimization could weaken the impact of defect on lithography. In order to compensate the amplitude and phase impact caused by the defects on the EUV mask blank, an advanced evolution strategy based on genetic algorithm (GA) combining with manufacturing rule check (MRC) is proposed to optimize the mask pattern. The influences of various defects on lithography are firstly summarized from mass simulation results, as well a novel method based on GA is proposed to compensate the negative impact by defects. Finally, the advantages of the proposed method in convergence efficiency and robustness are validated through comparing with differential evolution (DE) and original GA with simulations on contact patterns and logic patterns with the lithography simulator Sentaurus Lithography (Slitho).

Citation Download Citation

Ruixuan Wu, Lisong Dong, Rui Chen, Tianchun Ye, and Yayi Wei "A method for compensating lithographic influence of EUV mask blank defects by an advanced genetic algorithm", Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 111471U (26 September 2019); https://doi.org/10.1117/12.2536796

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