Presentation + Paper
26 September 2019 Alternative reticles for low-k1 EUV imaging
Author Affiliations +
Abstract
Alternative reticles have the potential to improve EPE for low-k1 EUV lithography on multiple aspects, by reducing mask 3D effects and improving optical contrast. We study the application of high-k masks and attenuated phase-shift masks at diffraction level and show that mitigation of mask 3D effects, such as contrast fading, is crucial for both good performance of both alternative-reticle types. We present optimum embodiments for both mask types. We find that the optimum attenuated phase-shift mask (PSM) results in a phase shift of 1.2 π. The extra 0.2 π phase shift required for the EUV mask compared to its DUV counterpart is needed to compensate the strong mask 3D effects; the 1.2 π phase shift is crucial for good performance at small pitch and was found for all 3 materials studied in this work: Ru, Pd, and Mo. We show that our Rubased attenuated PSM embodiment results in a strong gain in normalized image log slope (NILS). <30% NILS gain can be achieved compared to a Ta-based reference mask. To demonstrate the generic applicability of the mask, we show NILS gain using the same attenuated PSM embodiment for different use cases for 0.33 and 0.55-NA EUV lithography, including regular contacts, DRAM patterns, and contacts through pitch. We show that the optimum mask-type choice is application dependent and present our recommendations in a mask-decision tree. We discuss the implications of using new reticle absorbers for scanner integration.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M.-Claire van Lare, Frank J. Timmermans, and Jo Finders "Alternative reticles for low-k1 EUV imaging", Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 111470D (26 September 2019); https://doi.org/10.1117/12.2536415
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CITATIONS
Cited by 5 scholarly publications and 2 patents.
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KEYWORDS
Photomasks

Extreme ultraviolet

Reticles

Nanoimprint lithography

Extreme ultraviolet lithography

Phase shifts

Diffraction

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