Fe-doped III-V ferromagnetic semiconductors and heterostructures (Conference Presentation)

Masaaki Tanaka; Le Duc Anh; Nguyen Thanh Tu; Pham Nam N. Hai

doi:10.1117/12.2529004

10 September 2019 Fe-doped III-V ferromagnetic semiconductors and heterostructures (Conference Presentation)

Masaaki Tanaka, Le Duc Anh, Nguyen Thanh Tu, Pham Nam N. Hai

Proceedings Volume 11090, Spintronics XII; 110900P (2019) https://doi.org/10.1117/12.2529004
Event: SPIE Nanoscience + Engineering, 2019, San Diego, California, United States

Abstract

Ferromagnetic semiconductors (FMSs) with high Curie temperature (TC) are highly required for spintronics device applications. So far, however, the mainly studied FMSs, Mn-doped III-V FMSs, are only p-type and their TC values were much lower than 300 K. To search for new FMSs with high TC, most efforts have been concentrated on wide-gap materials [1], which yields no reliable and systematic result. We present a new class of FMSs with high TC, Fe-doped narrow-gap III-V FMSs. Because Fe atoms replace the cation (group-III) sites in the isoelectronic Fe3+ state, the carrier type can be controlled independently and thus both n-type and p-type FMSs are obtained. Using low-temperature molecular beam epitaxy, we have successfully grown zinc-blende-type thin-film crystals of both p-type FMSs [(Ga,Fe)Sb [2], (Al,Fe)Sb [3]] and n-type FMSs [(In,Fe)As [4], (In,Fe)Sb [5]]. The most notable feature in these Fe-based FMSs is that the TC value increases monotonically as the Fe content increases; and there is a tendency that TC is higher as the bandgap is narrower, which contradicts the prediction of the conventional mean-field Zener model. Intrinsic room-temperature ferromagnetism has been observed in (Ga1-x,Fex)Sb with x > 23% [2] and (In1-x,Fex)Sb with x > 16% [5]. These findings indicate that the Fe-doped III-V FMSs are promising for spintronics devices operating at room temperature. References [1] T. Dielt et al., Phys. Rev. B 63, 195205 (2001). [2] N. T. Tu et al., Appl. Phys. Lett. 108, 192401 (2016) [Featured Article]. [3] L. D. Anh et al., Appl. Phys. Let 107, 232405 (2015). [4] P. N. Hai et al., Appl. Phys. Lett. 101, 182403 (2012). [5] N. T. Tu et al., APEX 11 (6), 063005 (2018).

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Masaaki Tanaka, Le Duc Anh, Nguyen Thanh Tu, and Pham Nam N. Hai "Fe-doped III-V ferromagnetic semiconductors and heterostructures (Conference Presentation)", Proc. SPIE 11090, Spintronics XII, 110900P (10 September 2019); https://doi.org/10.1117/12.2529004

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KEYWORDS

Ferromagnetics

Group III-V semiconductors

P-type semiconductors

Semiconductors

Heterojunctions

Iron

Spintronics

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