Influence of deposition temperature and precursor pulse time on properties of SiO2, HfO2 monolayers deposited by PEALD

Chaoyi Yin; Meiping Zhu; Chen Song; Tingting Zeng; Nuo Xu; Yanzhi Wang; Yuanan Zhao; Kui Yi; Jianda Shao

doi:10.1117/12.2539917

8 July 2019 Influence of deposition temperature and precursor pulse time on properties of SiO₂, HfO₂ monolayers deposited by PEALD

Chaoyi Yin, Meiping Zhu, Chen Song, Tingting Zeng, Nuo Xu, Yanzhi Wang, Yuanan Zhao, Kui Yi, Jianda Shao

Author Affiliations +

Proceedings Volume 11064, Tenth International Conference on Thin Film Physics and Applications (TFPA 2019); 1106417 (2019) https://doi.org/10.1117/12.2539917
Event: Pacific Rim Laser Damage 2019 and Thin Film Physics and Applications 2019, 2019, Qingdao, China

Abstract

Plasma-enhanced atomic layer deposition (PEALD) has been widely used in microelectronics due to its precise coating thickness control and high uniformity. Coating qualities are strongly affected by deposition parameters and can be tailored accordingly. In this work, SiO₂ and HfO₂ monolayers were deposited by PEALD on fused silica and BK7 substrates for different measurement. The influence of deposition temperature and precursor pulse time on both coatings were studied. Coating thickness was obtained by ellipsometer and coating roughness was extracted by atomic force microscope. Laser-induced damage threshold (LIDT) and damage morphology were also studied. By optimizing the process parameters, coatings with desired properties can be deposited.

Citation Download Citation

Chaoyi Yin, Meiping Zhu, Chen Song, Tingting Zeng, Nuo Xu, Yanzhi Wang, Yuanan Zhao, Kui Yi, and Jianda Shao "Influence of deposition temperature and precursor pulse time on properties of SiO₂, HfO₂ monolayers deposited by PEALD", Proc. SPIE 11064, Tenth International Conference on Thin Film Physics and Applications (TFPA 2019), 1106417 (8 July 2019); https://doi.org/10.1117/12.2539917

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