Far Infrared Analysis Of The HgTe-CdTe Superlattice

S. Perkowitz; L. S. Kim; O. K. Wu; J. N. Schulman

doi:10.1117/12.960642

12 September 1989 Far Infrared Analysis Of The HgTe-CdTe Superlattice

S. Perkowitz, L. S. Kim, O. K. Wu, J. N. Schulman

Proceedings Volume 1106, Future Infrared Detector Materials; (1989) https://doi.org/10.1117/12.960642
Event: SPIE 1989 Technical Symposium on Aerospace Sensing, 1989, Orlando, FL, United States

Abstract

The unusual properties of the HgTe-CdTe superlattice (SL), and its potential as an infrared detector material, make it worth study. Growth of this SL is a complex process so that good characterization is essential. Important structural and electronic properties appear in the region 10-250 cm-1, making far infrared spectroscopy a powerful probe. We show how reflectivity spectra analyzed by a simple, effective theory give Hg content in the nominal CdTe layers, layer thicknesses, effective mass, and the HgTe-CdTe valence band offset. We get m*/m° = 0.010 and 0.022 for dHgTe/dcdTe = 80 Å/40 A, and 0.013 and 0.044 for dHgTe/d CdTe = 64 Å/60 Å, at 78 and 300K respectively. We obtain a valence band offset of 300 meV for the 80 Å/40 Å SL.

Citation Download Citation

S. Perkowitz, L. S. Kim, O. K. Wu, and J. N. Schulman "Far Infrared Analysis Of The HgTe-CdTe Superlattice", Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); https://doi.org/10.1117/12.960642

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