Linear avalanche photodetector based on CMOS process

Guohao Ju; Zhengxi Cheng; Yongping Chen

doi:10.1117/12.2521364

12 March 2019 Linear avalanche photodetector based on CMOS process

Guohao Ju, Zhengxi Cheng, Yongping Chen

Proceedings Volume 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application; 110231A (2019) https://doi.org/10.1117/12.2521364
Event: Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 2018, Xi'an, China

Abstract

A linear avalanche photodetector based on standard CMOS process is designed and fabricated. The doping dose of p-layer of the device with typical n⁺-p-π-p⁺ epitaxial structure is 1.82×10¹²/cm², and the depth of the doping peak concentration is 2.1 μm. The dark current, photocurrent, spectral response and excess noise factor are measured. The punch-through voltage is about 60 V, the breakdown voltage is about 147 V. The spectral response range is 400~1100 nm, and the peak response wavelength is about 850 nm, the peak response wavelength is in the near-infrared range. When the gain is 50, the reverse bias voltage is about 143.3 V, and excess noise factor is about 4.35. The results show that the device has an excellent performance of visible light detection.

Citation Download Citation

Guohao Ju, Zhengxi Cheng, and Yongping Chen "Linear avalanche photodetector based on CMOS process", Proc. SPIE 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 110231A (12 March 2019); https://doi.org/10.1117/12.2521364

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