The manifestation of rising of the impurity density of states after the field stress in increasing of the effective electron mobility in the inversion channel at the silicon-oxide contact

Galina V. Chucheva; Evgeny I. Goldman; Asaf Nabiev; Valentina G. Naryshkina

doi:10.1117/12.2521817

15 March 2019 The manifestation of rising of the impurity density of states after the field stress in increasing of the effective electron mobility in the inversion channel at the silicon-oxide contact

Galina V. Chucheva, Evgeny I. Goldman, Asaf Nabiev, Valentina G. Naryshkina

Author Affiliations +

Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 1102215 (2019) https://doi.org/10.1117/12.2521817
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation

Abstract

Measurements of characteristics of the inversion channel conductivity of MOS-transistors after the ion polarization and depolarization of samples in the range of values of the induction of the transverse magnetic field of 0 – 5 T at temperatures from 100 K to 200 K were carried out. After the ionic polarization at 420 K under the action of a strong electric field in the oxide at least 6·10¹³ cm^-2 ions flowed. The previously observed increase of the conductivity in the source-drain circuit after the polarization of insulating layers is up to 10 times explained by the formation of a new electrical transfer path through the surface impurity band, associated with delocalized D^– states, that are generated by neutralized ions located in the insulating layer at the interface with a semiconductor.

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Galina V. Chucheva, Evgeny I. Goldman, Asaf Nabiev, and Valentina G. Naryshkina "The manifestation of rising of the impurity density of states after the field stress in increasing of the effective electron mobility in the inversion channel at the silicon-oxide contact", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102215 (15 March 2019); https://doi.org/10.1117/12.2521817

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