Large Area Epitaxial HgCdTe Growth For Second Generation IRFPA Applications

W. Higgins; J. Egerton; P. Zimmermann; M. Reine; A. Sood; C. Johnson

doi:10.1117/12.960384

13 September 1989 Large Area Epitaxial HgCdTe Growth For Second Generation IRFPA Applications

W. Higgins, J. Egerton, P. Zimmermann, M. Reine, A. Sood, C. Johnson

Proceedings Volume 1097, Materials, Devices, Techniques, and Applications for Z-Plane Focal Plane Array; (1989) https://doi.org/10.1117/12.960384
Event: SPIE 1989 Technical Symposium on Aerospace Sensing, 1989, Orlando, FL, United States

Abstract

Large area HgCdTe epitaxial films grown on CdTe substrates are routinely used to produce high quality devices. Scaleup of substrate and liquid phase epitaxial (LPE) film growth and characterization processes will give techniques capable of supplying the throughput of low cost, high quality material required for manufacturing of large area infrared focal plane arrays (IRFPA).

Citation Download Citation

W. Higgins, J. Egerton, P. Zimmermann, M. Reine, A. Sood, and C. Johnson "Large Area Epitaxial HgCdTe Growth For Second Generation IRFPA Applications", Proc. SPIE 1097, Materials, Devices, Techniques, and Applications for Z-Plane Focal Plane Array, (13 September 1989); https://doi.org/10.1117/12.960384

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available