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This paper uses Virtual Fabrication to assess the imec 7 nm node (iN7) Self-Aligned Quadruple Patterning (SAQP) integration scheme for the 16 nm half-pitch Metal 2 line formation. We present first the technical challenge of obtaining defect-free M2 lines with SAQP, and then provide a solution to achieve a <1% failure rate using a combination of Advanced Process Control and Virtual Fabrication.
Benjamin Vincent,S. Lariviere,C. Wilson,R. H. Kim, andJ. Ervin
"Virtual fabrication and advanced process control improve yield for SAQP process assessment with 16 nm half-pitch", Proc. SPIE 10963, Advanced Etch Technology for Nanopatterning VIII, 109630Q (20 March 2019); https://doi.org/10.1117/12.2518099
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Benjamin Vincent, S. Lariviere, C. Wilson, R. H. Kim, J. Ervin, "Virtual fabrication and advanced process control improve yield for SAQP process assessment with 16 nm half-pitch," Proc. SPIE 10963, Advanced Etch Technology for Nanopatterning VIII, 109630Q (20 March 2019); https://doi.org/10.1117/12.2518099